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| ON Semiconductort NPN Complementary Silicon High-Power Transistors . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. 2N3055A MJ15015 * MJ2955A MJ15016 * *ON Semiconductor Preferred Device PNP * Current-Gain -- Bandwidth-Product @ IC = 1.0 Adc * fT = 0.8 MHz (Min) - NPN = 2.2 MHz (Min) - PNP Safe Operating Area -- Rated to 60 V and 120 V, Respectively *MAXIMUM RATINGS Rating Symbol VCEO VCBO VCEV 2N3055A MJ2955A 60 MJ15015 MJ15016 120 200 200 Unit Vdc Vdc Vdc Vdc Adc Adc 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS IIIIIIIIIIIIIIIIIIIIIII III I II I I I III I IIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIII I III I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I III I I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII III I I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII III I III I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I I III I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII Collector-Emitter Voltage Collector-Base Voltage 100 100 Collector-Emitter Voltage Base Reversed Biased Emitter-Base Voltage VEBO IC IB 7.0 15 Collector Current -- Continuous Base Current 7.0 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 115 0.65 180 1.03 Watts W/_C _C TJ, Tstg -65 to +200 CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Max Unit Thermal Resistance, Junction to Case 1.52 0.98 _C/W *Indicates JEDEC Registered Data. (2N3055A) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 3 Publication Order Number: 2N3055A/D 2N3055A MJ15015 MJ2955A MJ15016 PD(AV), AVERAGE POWER DISSIPATION (W) 200 150 MJ15015 MJ15016 100 50 2N3055A MJ2955A 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating http://onsemi.com 2 IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I III I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (1) Pulse Test: Pulse Width = 300 s, Duty Cycle v 2%. *Indicates JEDEC Registered Data. (2N3055A) *SWITCHING CHARACTERISTICS (2N3055A only) *DYNAMIC CHARACTERISTICS *ON CHARACTERISTICS (1) *SECOND BREAKDOWN OFF CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) RESISTIVE LOAD Fall Time Storage Time Rise Time Delay Time Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) (IC = 15 Adc, IB = 7.0 Adc) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) Second Breakdown Collector Current with Base Forward Biased (t = 0.5 s non-repetitive) 2N3055A, MJ2955A MJ15015, MJ15016 (VCE = 60 Vdc) Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) *Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0 Vdc) (VCE = 60 Vdc, VBE(off) = 0 Vdc) *Collector-Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0) Characteristic 2N3055A MJ15015 MJ2955A MJ15016 (VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc, 0 4 Adc yy tp = 25 s Duty Cycle v 2% http://onsemi.com 2N3055A, MJ2955A MJ15015, MJ15016 2N3055A, MJ2955A MJ15015, MJ15016 2N3055A, MJ2955A MJ15015, MJ15016 2N3055A, MJ2955A MJ15015, MJ15016 2N3055A, MJ2955A MJ15015, MJ15016 2N3055A, MJ15015 MJ2955A, MJ15016 VCEO(sus) Symbol VCE(sat) VBE(on) ICEO IEBO ICEV ICEV Cob hFE IS/b fT td ts tr tf 1.95 3.0 Min 60 120 0.8 2.2 0.7 10 20 5.0 60 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max 600 6.0 3.0 4.0 0.5 6.0 18 1.8 1.1 3.0 5.0 5.0 0.2 5.0 1.0 0.7 0.1 30 6.0 70 70 -- -- -- -- -- mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Adc Vdc pF s s s s -- 3 2N3055A MJ15015 MJ2955A MJ15016 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 hFE , DC CURRENT GAIN 70 50 30 20 10 7 5 3 2 VCE = 4.0 V TJ = 150C 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 IB, BASE CURRENT (AMP) 1 2 5 IC = 1 A 4A 8A TJ = 25C -55C 25C 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) 7 10 15 Figure 2. DC Current Gain BANDWIDTH PRODUCT (MHz) 3.5 3 V, VOLTAGE (VOLTS) 2.5 2 1.5 1 0.5 0 0.2 0.3 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 4 V VCE(sat) @ IC/IB = 10 0.5 0.7 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (AMP) 10 Figure 3. Collector Saturation Region TC = 25C 5.0 MJ2955A MJ15016 2.0 f T, CURRENT-GAIN 2N3055A MJ15015 1.0 0.1 0.2 0.3 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) Figure 4. "On" Voltages Figure 5. Current-Gain -- Bandwidth Product VCC +30 V t, TIME ( s) 7.5 30 -11 V tr, tf 10 ns DUTY CYCLE = 1.0% -5 V 1N6073 SCOPE 10 7 5 3 2 VCC = 30 V IC/IB = 10 TJ = 25C tr 25 s +13 V 0 1 0.7 0.5 0.3 0.2 0.1 0.2 0.3 td 5 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 7 10 15 Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) Figure 7. Turn-On Time http://onsemi.com 4 2N3055A MJ15015 MJ2955A MJ15016 10 7 5 2 0.1 0.7 0.5 0.3 0.2 0.1 VCC = 30 IC/IB = 10 IB1 = IB2 TJ = 25C 0.2 0.3 2 0.5 0.7 1 3 5 IC, COLLECTOR CURRENT (AMPS) 7 10 15 tf ts C, CAPACITANCE (pF) 3 t, TIME ( s) 400 TJ = 25C 200 Cib 2N3055A MJ15015 MJ2955A MJ15016 100 50 30 20 1.0 2.0 Cob 5.0 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS) 500 1000 Figure 8. Turn-Off Times Figure 9. Capacitances COLLECTOR CUT-OFF REGION NPN 10,000 IC, COLLECTOR CURRENT ( A) 1000 100 10 1.0 0.1 0.01 +0.2 REVERSE 25C +0.1 0 -0.1 -0.2 -0.3 -0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) -0.5 TJ = 150C 100C IC = ICES FORWARD VCE = 30 V IC, COLLECTOR CURRENT ( A) 1000 100 10 1.0 0.1 REVERSE 0.01 25C -0.1 0 +0.1 +0.2 +0.3 +0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.5 TJ = 150C PNP VCE = 30 V 100C IC = ICES FORWARD 0.001 -0.2 Figure 10. 2N3055A, MJ15015 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) 30 s 10 100 s 1 ms 20 Figure 11. MJ2955A, MJ15016 0.1 ms 10 5.0 1.0 ms 2.0 1.0 0.5 0.2 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 15 100 ms 5 2 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 100 ms dc 1 dc 120 10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 20 30 60 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Forward Bias Safe Operating Area 2N3055A, MJ2955A Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016 http://onsemi.com 5 2N3055A MJ15015 MJ2955A MJ15016 7There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 12 and 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. http://onsemi.com 6 2N3055A MJ15015 MJ2955A MJ15016 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 7 2N3055A MJ15015 MJ2955A MJ15016 PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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